Zenode.ai Logo
IPP014N06NF2SAKMA2

IPP014N06NF2SAKMA2

Active
INFINEON

INFINEON'S STRONGIRFET™ 2 POWER MOSFET 60 V FEATURES LOWEST RDS(ON) OF 1.4 MOHM, ADDRESSING A BROAD RANGE OF APPLICATIONS FROM LOW- TO HIGH-SWITCHING FREQUENCY.

Find alt
IPP014N06NF2SAKMA2

IPP014N06NF2SAKMA2

Active
INFINEON

INFINEON'S STRONGIRFET™ 2 POWER MOSFET 60 V FEATURES LOWEST RDS(ON) OF 1.4 MOHM, ADDRESSING A BROAD RANGE OF APPLICATIONS FROM LOW- TO HIGH-SWITCHING FREQUENCY.

Find alt

Description

General part information

IPP014N06NF2SAKMA2

Infineon'sStrongIRFET™ 2power MOSFET 60 V features lowest RDS(on)of 1.4 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP014N06NF2SAKMA2
Current - Continuous Drain (Id) (Ta)39 A
Current - Continuous Drain (Id) (Tc)198 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)305 nC
Input Capacitance (Ciss) (Max)13800 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NamePG-TO220-3-U05
Power Dissipation (Max)300 W, 3.8 W
Rds On (Max)1.4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources