Specification	HAS175M12BM3T

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Tc)	234 A
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Max)	422 nC
Input Capacitance (Ciss) (Max)	12900 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	Module
Power - Max (Tc)	789 W
Rds On (Max)	10.4 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	3.6 V

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