RBV2502D
ActiveEIC Semiconductor
BRIDGE RECT 1P 200V 25A RBV-25
RBV2502D
ActiveEIC Semiconductor
BRIDGE RECT 1P 200V 25A RBV-25
Description
General part information
RBV2502D
BRIDGE RECT 1P 200V 25A RBV-25
Technical Specifications
Parameters and characteristics for this part
| Specification | RBV2502D |
|---|---|
| Current - Average Rectified (Io) | 25 A |
| Current - Reverse Leakage | 10 µA |
| Diode Type | Single Phase |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 4-SIP, RBV-25 |
| Package Name | RBV-25 |
| Technology | Standard |
| Voltage - Peak Reverse (Max) | 200 V |
Pricing
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CAD
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Documents
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