
BPV11F
ActiveVishay Semiconductor Opto Division
PHOTOTRANSISTOR 900 TO 980 NM

BPV11F
ActiveVishay Semiconductor Opto Division
PHOTOTRANSISTOR 900 TO 980 NM
Description
General part information
BPV11F
PHOTOTRANSISTOR 900 TO 980 NM
Technical Specifications
Parameters and characteristics for this part
| Specification | BPV11F |
|---|---|
| Current - Collector (Ic) (Max) | 0.01 mA |
| Current - Dark (Id) (Max) | 50 nA |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 100 °C |
| Operating Temperature (Min) | -40 °C |
| Orientation | Top View |
| Package Diameter | 5 mm |
| Package Name | Radial |
| Power - Max | 150 mW |
| Viewing Angle | 30 ° |
| Voltage - Collector Emitter Breakdown (Max) | 70 V |
| Wavelength | 930 nm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources