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Description

General part information

MCU011N10YL-TP

POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationMCU011N10YL-TP
Current - Continuous Drain (Id) (Tc)55 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)28 nC
Input Capacitance (Ciss) (Max)1380 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252 (DPAK)
Power Dissipation (Max)83 W
Rds On (Max)11 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

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CAD

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