Specification	IXSA60N65L2-7TR

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On)	15 V
Drive Voltage (Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	94.7 nC
Input Capacitance (Ciss) (Max)	2000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	TO-263-7, D2PAK
Power Dissipation (Max)	249 W
Rds On (Max)	53 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-5 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	4.5 V

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