FDC638P-P
ObsoleteON Semiconductor
MOSFET N-CH 60V SUPERSOT6
FDC638P-P
ObsoleteON Semiconductor
MOSFET N-CH 60V SUPERSOT6
Description
General part information
FDC638P-P
P-Channel 20 V 4.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Technical Specifications
Parameters and characteristics for this part
| Specification | FDC638P-P |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 14 nC |
| Input Capacitance (Ciss) (Max) | 1160 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Name | SuperSOT™-6 |
| Power Dissipation (Max) | 1.6 W |
| Rds On (Max) | 48 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1.5 V |
Pricing
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