
2N3676
ActiveMicrochip Technology
BIPOLAR TRANSISTORS - BJT SMALL-SIGNAL BJT

2N3676
ActiveMicrochip Technology
BIPOLAR TRANSISTORS - BJT SMALL-SIGNAL BJT
Description
General part information
2N3676
Bipolar (BJT) Transistor NPN 90 V 3 A 8 W Through Hole TO-5AA
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3676 |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-5-3 Metal Can, TO-205AA |
| Package Name | TO-5AA |
| Power - Max | 8 W |
| Transistor Type | NPN |
| Vce Saturation (Max) | 800 mV, 800 mV |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available