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2N3676

2N3676

Active
Microchip Technology

BIPOLAR TRANSISTORS - BJT SMALL-SIGNAL BJT

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2N3676

2N3676

Active
Microchip Technology

BIPOLAR TRANSISTORS - BJT SMALL-SIGNAL BJT

Find alt

Description

General part information

2N3676

Bipolar (BJT) Transistor NPN 90 V 3 A 8 W Through Hole TO-5AA

Technical Specifications

Parameters and characteristics for this part

Specification2N3676
Current - Collector (Ic) (Max)3 A
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-5-3 Metal Can, TO-205AA
Package NameTO-5AA
Power - Max8 W
Transistor TypeNPN
Vce Saturation (Max)800 mV, 800 mV
Voltage - Collector Emitter Breakdown (Max)90 V

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