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Description

General part information

MCT01N65-TP

MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationMCT01N65-TP
Current - Continuous Drain (Id) (Ta)1 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)3 nC, 3 nC
Input Capacitance (Ciss) (Max)34 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223
Power Dissipation (Max)2 W
Rds On (Max)11 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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