Description
General part information
IRF7205PBF
The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF7205PBF |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4.6 A, 4.6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 40 nC |
| Input Capacitance (Ciss) (Max) | 870 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SO, 8-SOIC |
| Package Width | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) | 70 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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