
S1JLHMTG
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
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S1JLHMTG
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | S1JLHMTG |
|---|---|
| Capacitance @ Vr, F | 9 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | DO-219AB |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 1.8 µs |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | Sub SMA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
S1J Series
Diode 600 V 1A Surface Mount Sub SMA
Documents
Technical documentation and resources