IRFD123
ObsoleteON Semiconductor
MOSFET N-CH 100V 1.3A 4DIP
IRFD123
ObsoleteON Semiconductor
MOSFET N-CH 100V 1.3A 4DIP
Description
General part information
IRFD123
MOSFET N-CH 100V 1.3A 4DIP
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFD123 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.3 A |
| Drain to Source Voltage (Vdss) | 80 V, 100 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 16 nC |
| Input Capacitance (Ciss) (Max) | 360 pF |
| Mounting Type | Through Hole |
| Package Length | 0.3 in |
| Package Name | 4-HVMDIP, 4-DIP |
| Package Width | 7.62 mm |
| Rds On (Max) | 270 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 4 V |
Pricing
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