
G080P06T
ActiveGoford Semiconductor
P-60V,-195A,RD(MAX)<7.5M@-10V,VT

G080P06T
ActiveGoford Semiconductor
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
Description
General part information
G080P06T
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
Technical Specifications
Parameters and characteristics for this part
| Specification | G080P06T |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 195 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 186 nC |
| Input Capacitance (Ciss) (Max) | 14692 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power Dissipation (Max) | 294 W |
| Rds On (Max) | 7.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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