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CY7C1011DV33-10ZSXIT

CY7C1011DV33-10ZSXIT

Obsolete
INFINEON

SRAM, ASYNCHRONOUS SRAM, 2 MBIT, 128K X 16BIT, TSOP-II, 44 PINS, 3 V

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CY7C1011DV33-10ZSXIT

CY7C1011DV33-10ZSXIT

Obsolete
INFINEON

SRAM, ASYNCHRONOUS SRAM, 2 MBIT, 128K X 16BIT, TSOP-II, 44 PINS, 3 V

Find alt

Description

General part information

CY7C1011 Series

CY7C1011DV33-10ZSXIT is a high-performance CMOS static RAM organized as 128K words by 16 bits. Writing to the device is accomplished by taking Chip Enable (active-low CE) and Write Enable (active-low WE) inputs LOW. If Byte Low Enable (active-low BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (active-low BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable (active-low CE) and Output Enable (active-low OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (active-low BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15.

Technical Specifications

Parameters and characteristics for this part

SpecificationCY7C1011DV33-10ZSXIT
Access Time10 ns
Memory Depth128 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size2 Mb
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length10.16 mm
Package Name44-TSOP, 44-TSOP II
Package Width10.16 mm
TechnologySRAM - Asynchronous
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)3 V
Write Cycle Time - Page10 ns
Write Cycle Time - Word10 ns

Pricing

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