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IPD048N06L3GBTMA1

IPD048N06L3GBTMA1

Obsolete
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; DPAK TO-252 PACKAGE; 4.8 MOHM;

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IPD048N06L3GBTMA1

IPD048N06L3GBTMA1

Obsolete
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; DPAK TO-252 PACKAGE; 4.8 MOHM;

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Description

General part information

IPD048N06L3GBTMA1

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD048N06L3GBTMA1
Current - Continuous Drain (Id) (Tc)90 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)50 nC
Input Capacitance (Ciss) (Max)8400 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)115 W
Rds On (Max)4.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part