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GD30MPS06J-TR

GD30MPS06J-TR

Obsolete
GeneSiC Semiconductor

DIODE SIL CARB 650V 51A TO2637

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GD30MPS06J-TR

GD30MPS06J-TR

Obsolete
GeneSiC Semiconductor

DIODE SIL CARB 650V 51A TO2637

Find alt

Description

General part information

GD30MPS06J-TR

DIODE SIL CARB 650V 51A TO2637

Technical Specifications

Parameters and characteristics for this part

SpecificationGD30MPS06J-TR
Capacitance735 pF
Current - Average Rectified (Io)51 A
Current - Reverse Leakage5 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package Leads7 Leads
Package NameTO-263-7, D2PAK
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.8 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

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