
HGT1S7N60B3D
ActiveON Semiconductor
IGBT 600V 14A TO262

HGT1S7N60B3D
ActiveON Semiconductor
IGBT 600V 14A TO262
Description
General part information
HGT1S7N60B3D
IGBT 600 V 14 A 60 W Through Hole TO-262 (I2PAK)
Technical Specifications
Parameters and characteristics for this part
| Specification | HGT1S7N60B3D |
|---|---|
| Current - Collector (Ic) (Max) | 14 A |
| Current - Collector Pulsed (Icm) | 56 A |
| Gate Charge | 30 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-262AA, I2PAK, TO-262-3 Long Leads |
| Package Name | TO-262 (I2PAK) |
| Power - Max | 60 W |
| Reverse Recovery Time (trr) | 21 ns |
| Switching Energy (Off) | 120 µJ |
| Switching Energy (On) | 160 µJ |
| Td (off) @ 25°C | 130 ns |
| Td (on) @ 25°C | 26 ns |
| Test Condition Current | 7 A |
| Test Condition Resistance | 50 Ohm |
| Test Condition Voltage | 480 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
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