TK4P60DB(T6RSS-Q)
ActiveToshiba Semiconductor and Storage
MOSFET N-CH 600V 3.7A DPAK
TK4P60DB(T6RSS-Q)
ActiveToshiba Semiconductor and Storage
MOSFET N-CH 600V 3.7A DPAK
Description
General part information
TK4P60DB(T6RSS-Q)
MOSFET N-CH 600V 3.7A DPAK
Technical Specifications
Parameters and characteristics for this part
| Specification | TK4P60DB(T6RSS-Q) |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 3.7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 11 nC |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power Dissipation (Max) | 80 W |
| Rds On (Max) | 2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4.4 V |
Pricing
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