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JAN2N6849

Obsolete
Microsemi Corporation

MOSFET P-CH 100V 6.5A TO39

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JAN2N6849

Obsolete
Microsemi Corporation

MOSFET P-CH 100V 6.5A TO39

Find alt

Description

General part information

JAN2N6849

MOSFET P-CH 100V 6.5A TO39

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N6849
Current - Continuous Drain (Id) (Tc)6.5 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)34.8 nC, 34.8 nC
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-205AF Metal Can
Package NameTO-39
Power Dissipation (Max)800 mW, 25 W
Qualification564, MIL-PRF-19500
Rds On (Max)320 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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