Specification	NTMFS4C810NAT1G

Current - Continuous Drain (Id) (Ta)	8.2 A
Current - Continuous Drain (Id) (Tc)	46 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	18.6 nC
Input Capacitance (Ciss) (Max)	987 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Leads	5 Leads
Package Length	5 mm
Package Name	8-SOFL, 5-DFN, 8-PowerTDFN
Package Width	6 mm
Power Dissipation (Max)	750 mW, 23.6 W
Rds On (Max)	5.88 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

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