Description
General part information
AIMCQ120R160M1TXTMA1
The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
Technical Specifications
Parameters and characteristics for this part
| Specification | AIMCQ120R160M1TXTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 18.6 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On) | 18 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 14 nC |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 22-PowerBSOP Module |
| Package Name | PG-HDSOP-22 |
| Power Dissipation (Max) | 125 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 200 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 25 V |
| Vgs(th) (Max) | 5.1 V |
Pricing
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