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FOD814A300W

FOD814A300W

Active
ON Semiconductor

OPTOCOUPLER, TRANSISTOR OUTPUT, 1 CHANNEL, DIP, 4 PINS, 50 MA, 5 KV, 50 %

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FOD814A300W

FOD814A300W

Active
ON Semiconductor

OPTOCOUPLER, TRANSISTOR OUTPUT, 1 CHANNEL, DIP, 4 PINS, 50 MA, 5 KV, 50 %

Find alt

Description

General part information

FOD814A Series

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Technical Specifications

Parameters and characteristics for this part

SpecificationFOD814A300W
Current - DC Forward (If) (Max)50 mA
Current - Output / Channel50 mA
Current Transfer Ratio (Max)150 %
Current Transfer Ratio (Min)50 %
Fall Time (Typ)3 µs
Input TypeAC, DC
Mounting TypeThrough Hole
Number of Channels1
Operating Temperature (Max)105 °C
Operating Temperature (Min)-55 °C
Output TypeTransistor
Package Length10.16 mm
Package Name4-DIP
Package Width10.16 mm
Rise Time (Typ)4 µs
Vce Saturation (Max)200 mV
Voltage - Forward (Vf) (Typ)1.2 V
Voltage - Isolation5000 Vrms
Voltage - Output (Max)70 V

Pricing

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CAD

3D models and CAD resources for this part