DMG6302UDW-13
ActiveDiodes Inc
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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DMG6302UDW-13
ActiveDiodes Inc
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMG6302UDW-13 |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150 mA |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.34 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 30.7 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 310 mW |
| Rds On (Max) @ Id, Vgs | 10 Ohm |
| Supplier Device Package | SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.05 | |
| 20000 | $ 0.05 | |||
| 30000 | $ 0.04 | |||
| 50000 | $ 0.04 | |||
| 70000 | $ 0.04 | |||
| 100000 | $ 0.04 | |||
| 250000 | $ 0.04 | |||
Description
General part information
DMG6302UDW Series
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources