TP65H300G4LSG-TR

Active

Transphorm

GANFET N-CH 650V 6.5A 3PQFN

Search across all available documentation for this part.

Active

Transphorm

GANFET N-CH 650V 6.5A 3PQFN

Technical Specifications

Parameters and characteristics for this part

Specification	TP65H300G4LSG-TR

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.6 nC
Input Capacitance (Ciss) (Max) @ Vds	760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-PowerDFN
Power Dissipation (Max)	21 W
Rds On (Max) @ Id, Vgs	312 mOhm
Supplier Device Package	3-PQFN (8x8)
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	18 V
Vgs(th) (Max) @ Id	2.6 V

GANFET N-CH 650V 6.5A 3PQFN

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id
Transphorm TP65H300G4LSG-TR	-55 °C	150 °C	21 W	760 pF	9.6 nC	3-PowerDFN	N-Channel	650 V	GaNFET (Gallium Nitride)	3-PQFN (8x8)	8 V	6.5 A	312 mOhm	Surface Mount	18 V	2.6 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 6.5A (Tc) 21W (Tc) Surface Mount 3-PQFN (8x8)

Technical documentation and resources

No documents available