GD5F1GQ5REYIGR
ActiveGigaDevice Semiconductor (HK) Limited
IC FLASH 1GBIT SPI/QUAD
GD5F1GQ5REYIGR
ActiveGigaDevice Semiconductor (HK) Limited
IC FLASH 1GBIT SPI/QUAD
Description
General part information
GD5F1GQ5REYIGR
FLASH - NAND (SLC) Memory IC 1Gbit SPI - Quad I/O, QPI, DTR 104 MHz 9.5 ns 8-WSON (6x8)
Technical Specifications
Parameters and characteristics for this part
| Specification | GD5F1GQ5REYIGR |
|---|---|
| Access Time | 9.5 ns |
| Clock Frequency | 104 MHz |
| Memory Depth | 256 M |
| Memory Format | FLASH |
| Memory Interface (Type) | SPI - Quad I/O, QPI, DTR |
| Memory Size | 1 Gbit |
| Memory Type | Non-Volatile |
| Memory Width | 4 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 8-WDFN Exposed Pad |
| Package Length | 6 |
| Package Name | 8-WSON |
| Package Width | 8 |
| Technology | FLASH - NAND (SLC) |
| Voltage - Supply (Maximum) | 2 V |
| Voltage - Supply (Minimum) | 1.7 V |
| Write Cycle Time - Page | 600 µs |
| Write Cycle Time - Word | 600 µs |
Pricing
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