NTDS015N15MCT4G
ObsoleteON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 150 V, 50 A, 15 MΩ
NTDS015N15MCT4G
ObsoleteON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 150 V, 50 A, 15 MΩ
Description
General part information
NTDS015N15MCT4G
This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTDS015N15MCT4G |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 11 A |
| Current - Continuous Drain (Id) (Tc) | 50 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 27 nC |
| Input Capacitance (Ciss) (Max) | 2120 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power Dissipation (Max) | 83 W, 3.8 W |
| Rds On (Max) | 15 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
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Documents
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