UFR3010PF
ActiveMicrochip Technology
DIODE GEN PURP 100V 30A DO21
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UFR3010PF
ActiveMicrochip Technology
DIODE GEN PURP 100V 30A DO21
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | UFR3010PF |
|---|---|
| Capacitance @ Vr, F | 140 pF |
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage @ Vr | 15 µA |
| Mounting Type | Press Fit |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | DO-208AA |
| Reverse Recovery Time (trr) | 35 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | DO-21 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 975 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 54.32 | |
UFR3010 Series
DIODE GEN PURP 100V 30A DO21
| Part | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) | Speed | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Package / Case | Technology | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology UFR3010PF | 140 pF | 100 V | 175 ░C | -55 C | 30 A | 200 mA, 500 ns | Press Fit | 975 mV | DO-208AA | Standard | 15 µA | 35 ns | DO-21 |
Description
General part information
UFR3010 Series
Diode 100 V 30A Press Fit DO-21
Documents
Technical documentation and resources
No documents available