IRFR4104TRLPBF

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 5.5 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 5.5 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR4104TRLPBF

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	89 nC
Input Capacitance (Ciss) (Max) @ Vds	2950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)
Infineon Technologies IRFR4104TRRPBF	42 A	2950 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	5.5 mOhm	N-Channel	20 V	-55 °C	175 ░C	89 nC	140 W	4 V	MOSFET (Metal Oxide)	TO-252AA (DPAK)	Surface Mount	40 V
Infineon Technologies IRFR4104TRLPBF	42 A	2950 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	5.5 mOhm	N-Channel	20 V	-55 °C	175 ░C	89 nC	140 W	4 V	MOSFET (Metal Oxide)	TO-252AA (DPAK)	Surface Mount	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 0.72

General part information

N-Channel 40 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources