
BYC30-1200PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 1.2KV 30A TO220AC
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BYC30-1200PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 1.2KV 30A TO220AC
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BYC30-1200PQ | 
|---|---|
| Current - Average Rectified (Io) | 30 A | 
| Current - Reverse Leakage @ Vr | 250 µA | 
| Mounting Type | Through Hole | 
| Operating Temperature - Junction [Max] | 175 °C | 
| Package / Case | TO-220-2 | 
| Reverse Recovery Time (trr) | 65 ns | 
| Speed | 200 mA, 500 ns | 
| Supplier Device Package | TO-220AC | 
| Technology | Standard | 
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV | 
| Voltage - Forward (Vf) (Max) @ If | 3.3 V | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 6000 | $ 1.00 | |
Description
General part information
BYC30 Series
Diode 1200 V 30A Through Hole TO-220AC
Documents
Technical documentation and resources
No documents available