Description
General part information
IPN70R750P7SATMA1
CoolMOS™ P7superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makesCoolMOS™ P7 in SOT-223a perfect fit for its target applications. 700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC).
Technical Specifications
Parameters and characteristics for this part
| Specification | IPN70R750P7SATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 6.5 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 8.3 nC |
| Input Capacitance (Ciss) (Max) | 306 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | PG-SOT223 |
| Power Dissipation (Max) | 6.7 W |
| Rds On (Max) | 750 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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