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HUF75645S3ST_Q

HUF75645S3ST_Q

Active
ON Semiconductor

N CHANNEL ULTRAFET 100V, 75A, 1

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HUF75645S3ST_Q

HUF75645S3ST_Q

Active
ON Semiconductor

N CHANNEL ULTRAFET 100V, 75A, 1

Find alt

Description

General part information

HUF75645S3ST_Q

N CHANNEL ULTRAFET 100V, 75A, 1

Technical Specifications

Parameters and characteristics for this part

SpecificationHUF75645S3ST_Q
Current - Continuous Drain (Id) (Tc)75 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)238 nC
Input Capacitance (Ciss) (Max)3790 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameD2PAK
Power Dissipation (Max)310 W
Rds On (Max)14 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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