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INFINEON IHW30N110R5XKSA1

IHW30N110R5XKSA1

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INFINEON

THE IHW30N110R5 IS A 1100 V, 30 A IGBT WITH MONOLITHICALLY INTEGRATED DIODE IN TO-247 PACKAGE

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INFINEON IHW30N110R5XKSA1

IHW30N110R5XKSA1

Active
INFINEON

THE IHW30N110R5 IS A 1100 V, 30 A IGBT WITH MONOLITHICALLY INTEGRATED DIODE IN TO-247 PACKAGE

Find alt

Description

General part information

IHW30N110R5XKSA1

Reverse Conducting R51100 V, 30 AIGBTin TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements ofinduction heating applicationsusing single-ended resonant topology. Thanks to best product performances and high compatibility with existing gate driver solution, 1100 V 30 A IGBT represents the optimal choice for soft switching topologies.

Technical Specifications

Parameters and characteristics for this part

SpecificationIHW30N110R5XKSA1
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)90 A
Gate Charge240 nC
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-247-3
Package NamePG-TO247-3
Power - Max330 W
Td (off) @ 25°C350 ns
Vce(on) (Max)1.85 V

Pricing

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CAD

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