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JAN1N6169US

JAN1N6169US

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Microchip Technology

TVS DIODE 98.8VWM 187.74V SQMELF

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JAN1N6169US

JAN1N6169US

Active
Microchip Technology

TVS DIODE 98.8VWM 187.74V SQMELF

Find alt

Description

General part information

JAN1N6169US

TVS DIODE 98.8VWM 187.74V SQMELF

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN1N6169US
ApplicationsGeneral Purpose
Bidirectional Channels1
Current - Peak Pulse7.98 A
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSQ-MELF, C
Package NameSQ-MELF, C
Power - Peak Pulse1500 W
Power Line ProtectionNo
Qualification516, MIL-PRF-19500
TypeZener
Voltage - Breakdown (Min)117.33 V
Voltage - Clamping (Max)187.74 V
Voltage - Reverse Standoff (Typ)98.8 V

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