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IAUCN04S6N017TATMA1

IAUCN04S6N017TATMA1

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INFINEON

IAUCN04S6N017T IS AN AUTOMOTIVE MOSFET OFFERING INFINEON'S NEW TOP SIDE COOLING PACKAGE SSO10T TSC WITH OPTIMOS 6 TECHNOLOGY FOR HIGH POWER DENSITY AND OPTIMIZED SYSTEM COSTS.

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IAUCN04S6N017TATMA1

IAUCN04S6N017TATMA1

Active
INFINEON

IAUCN04S6N017T IS AN AUTOMOTIVE MOSFET OFFERING INFINEON'S NEW TOP SIDE COOLING PACKAGE SSO10T TSC WITH OPTIMOS 6 TECHNOLOGY FOR HIGH POWER DENSITY AND OPTIMIZED SYSTEM COSTS.

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Description

General part information

IAUCN04S6N017TATMA1

This innovative TSC package enables best cooling, high power density optimized system costs An initial portfolio offering starts with 4 products in OptiMOSTM6 40V and is extended soon.RDS (on) max ranges from 1.73 mΩ down to 0.75 mΩ SSO10T TSC package is JEDEC listed for open market use and wide 2nd source compatibility.

Technical Specifications

Parameters and characteristics for this part

SpecificationIAUCN04S6N017TATMA1
Current - Continuous Drain (Id) (Ta)58 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)7 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)49 nC, 49 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)3250 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package FeaturesExposed Pad
Package Length0.216 in
Package NamePG-LHDSO-10-1, 10-LSOP
Package Width5.48 mm
Power Dissipation (Max)103 W
QualificationAEC-Q101
Rds On (Max)1.73 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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Documents

Technical documentation and resources

    IAUCN04S6N017TATMA1 | INFINEON | Zenode.ai