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SIA471DJ-T1-GE3

SIA471DJ-T1-GE3

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Vishay Dale

MOSFET P-CH 30V 12.9A/30.3A PPAK

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SIA471DJ-T1-GE3

SIA471DJ-T1-GE3

Active
Vishay Dale

MOSFET P-CH 30V 12.9A/30.3A PPAK

Find alt

Description

General part information

SIA471DJ-T1-GE3

MOSFET P-CH 30V 12.9A/30.3A PPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationSIA471DJ-T1-GE3
Current - Continuous Drain (Id) (Ta)12.9 A
Current - Continuous Drain (Id) (Tc)30.3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)27.8 nC
Input Capacitance (Ciss) (Max)1170 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SC-70-6
Package NamePowerPAK® SC-70-6
Power Dissipation (Max)3.5 W, 19.2 W
Rds On (Max)14 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max) Negative-20 V
Vgs (Max) Positive16 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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