Description
General part information
IMZC120R053M2HXKSA1
TheCoolSiC™ MOSFET discrete1200 V, 53 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMZC120R053M2HXKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 38 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 30 nC |
| Input Capacitance (Ciss) (Max) | 1010 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | PG-TO247-4-17 |
| Power Dissipation (Max) | 182 W |
| Rds On (Max) | 53 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -7 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.1 V |
Pricing
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