Specification	SISS05DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	29.4 A
Current - Continuous Drain (Id) (Tc)	108 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	115 nC, 115 nC
Input Capacitance (Ciss) (Max)	4930 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8S
Package Name	PowerPAK® 1212-8S
Power Dissipation (Max)	65.7 W, 5 W
Rds On (Max)	3.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-20 V
Vgs (Max) Positive	16 V
Vgs(th) (Max)	2.2 V

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