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G050P03S

G050P03S

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Goford Semiconductor

P-30V,-25A,RD(MAX)<5.5M@-10V,VTH

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G050P03S

G050P03S

Active
Goford Semiconductor

P-30V,-25A,RD(MAX)<5.5M@-10V,VTH

Find alt

Description

General part information

G050P03S

P-30V,-25A,RD(MAX)<5.5M@-10V,VTH

Technical Specifications

Parameters and characteristics for this part

SpecificationG050P03S
Current - Continuous Drain (Id) (Tc)25 A, 25 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)111 nC
Input Capacitance (Ciss) (Max)7221 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOIC, 8-SOP
Package Width3.9 mm
Power Dissipation (Max)3.5 W
Rds On (Max)5.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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