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FDB8874

FDB8874

Obsolete
ON Semiconductor

MOSFET N-CH 30V 21A/121A TO263AB

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FDB8874

FDB8874

Obsolete
ON Semiconductor

MOSFET N-CH 30V 21A/121A TO263AB

Find alt

Description

General part information

FDB8874

MOSFET N-CH 30V 21A/121A TO263AB

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB8874
Current - Continuous Drain (Id) (Ta)21 A
Current - Continuous Drain (Id) (Tc)121 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)72 nC
Input Capacitance (Ciss) (Max)3130 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)110 W
Rds On (Max)4.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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