HGTH20N50E1D
ActiveON Semiconductor
IGBT 500V 20A TO-218 ISOLATED
HGTH20N50E1D
ActiveON Semiconductor
IGBT 500V 20A TO-218 ISOLATED
Description
General part information
HGTH20N50E1D
IGBT 500V 20A TO-218 ISOLATED
Technical Specifications
Parameters and characteristics for this part
| Specification | HGTH20N50E1D |
|---|---|
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 35 A |
| Gate Charge | 33 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-218-3 Isolated Tab, TO-218AC |
| Package Name | TO-218 Isolated |
| Power - Max | 100 VA |
| Vce(on) (Max) | 3.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 500 V |
Pricing
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