1N5407-G
ActiveComchip Technology
DIODE GEN PURP 800V 3A DO27
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1N5407-G
ActiveComchip Technology
DIODE GEN PURP 800V 3A DO27
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5407-G |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 125 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-201AD, Axial |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-27 (DO-201AD) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Box (TB) | 6000 | $ 0.11 | |
| 12000 | $ 0.10 | |||
| 30000 | $ 0.09 | |||
| 60000 | $ 0.09 | |||
1N5407 Series
DIODE GEN PURP 800V 3A DO27
| Part | Voltage - Forward (Vf) (Max) @ If | Speed | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Mounting Type | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology 1N5407-G | 1 V | Standard Recovery >500ns | 200 mA | 800 V | DO-27 (DO-201AD) | Through Hole | 3 A | 5 µA | 125 °C | -65 C | DO-201AD, Axial | Standard |
Description
General part information
1N5407 Series
Diode 800 V 3A Through Hole DO-27 (DO-201AD)
Documents
Technical documentation and resources
No documents available