OP506W
ActiveTT Electronics/BI
SENSOR PHOTO 935NM TOP VIEW T1
OP506W
ActiveTT Electronics/BI
SENSOR PHOTO 935NM TOP VIEW T1
Description
General part information
OP506W
SENSOR PHOTO 935NM TOP VIEW T1
Technical Specifications
Parameters and characteristics for this part
| Specification | OP506W |
|---|---|
| Current - Collector (Ic) (Max) | 0.0001 µA |
| Current - Dark (Id) (Max) | 100 nA |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 100 °C |
| Operating Temperature (Min) | -40 °C |
| Orientation | Top View |
| Package / Case | T-1 |
| Power - Max | 100 mW |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Wavelength | 935 nm |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Custom Optoelectronic Assemblies Tri-Fold
REACH Compliance for Juarez Site
RoHs 3 Declaration Form for Juarez Site
OP505 506 535 705
App Note 213: Application Circuits for the Phototransistor Switch
Optoelectronics One Pager
Conflict Minerals Policy for Juarez Site
Declaration of Mineral Conflict Free Material for Juarez Site
Sensors Product Selection Guide
Optoelectronics for Medical Tri-Fold
Supplier Quality Requirements Manual
Juarez ISO 9001
Lead Free and RoHs Compliance for Juarez Site
Quality Manual for Juarez Site
RoHs Letter for Juarez Site
OP506W | Datasheet