Description
General part information
IPT65R099CFD7XTMA1
Infineon’s650 V CoolMOS™ CFD7superjunction MOSFET IPT65R099CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such asserver,telecom,solar, andEV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to theCFD2 SJ MOSFETfamily, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPT65R099CFD7XTMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSFN |
| Package Name | PG-HSOF-8-2 |
| Technology | MOSFET (Metal Oxide) |
Pricing
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