Specification	SI1071X-T1-E3

Current - Continuous Drain (Id) (Ta)	960 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	13.3 nC
Input Capacitance (Ciss) (Max)	315 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SC-89 (SOT-563F)
Power Dissipation (Max)	236 mW
Rds On (Max)	167 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.45 V

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