2SB1126-TD-E
ActiveON Semiconductor
TRANSISTOR
2SB1126-TD-E
ActiveON Semiconductor
TRANSISTOR
Description
General part information
2SB1126-TD-E
Bipolar (BJT) Transistor PNP 50 V 1.5 A 120MHz 500 mW Surface Mount PCP
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SB1126-TD-E |
|---|---|
| Current - Collector (Ic) (Max) | 1.5 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 4000 |
| Frequency - Transition | 120 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-243AA |
| Package Name | PCP |
| Power - Max | 0.5 W |
| Transistor Type | PNP |
| Vce Saturation (Max) | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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