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IAUCN04S7L004ATMA1

IAUCN04S7N006ATMA1

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INFINEON

INFINEON’S IAUCN04S7N006 AUTOMOTIVE MOSFET WITH RDS(ON) MAX 0.4-3.0 MΩ, HIGH POWER EFFICIENCY, LOW RON*A. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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IAUCN04S7L004ATMA1

IAUCN04S7N006ATMA1

Active
INFINEON

INFINEON’S IAUCN04S7N006 AUTOMOTIVE MOSFET WITH RDS(ON) MAX 0.4-3.0 MΩ, HIGH POWER EFFICIENCY, LOW RON*A. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Description

General part information

IAUCN04S7N006ATMA1

A portfolio of 16 products (RDS (on)max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class product FOM (RDS (on)x Qg) and performance on the market

Technical Specifications

Parameters and characteristics for this part

SpecificationIAUCN04S7N006ATMA1
Current - Continuous Drain (Id)175 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)107 nC
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-43
QualificationAEC-Q101
TechnologyMOSFET (Metal Oxide)

Pricing

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