Description
General part information
IDW30G120C5BFKSA1
TheCoolSiC™ Schottky diodegeneration 5 1200 V, 30 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Technical Specifications
Parameters and characteristics for this part
| Specification | IDW30G120C5BFKSA1 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 44 A |
| Current - Reverse Leakage | 124 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3 |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.65 V, 1.65 V |
Pricing
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