DMG3415UQ-7

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

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Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

Technical Specifications

Parameters and characteristics for this part

Specification	DMG3415UQ-7

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	294 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	900 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	42.5 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NRND = Not Recommended for New Design

Part	Qualification	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Grade	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case
Diodes Inc DMG3415UQ-7	AEC-Q101	MOSFET (Metal Oxide)	1.8 V 4.5 V	4 A	20 V	-55 °C	150 °C	Automotive	P-Channel	1 V	900 mW	SOT-23-3	Surface Mount	42.5 mOhm	9.1 nC	294 pF	8 V	SC-59 SOT-23-3 TO-236-3

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General part information

NRND = Not Recommended for New Design

Technical documentation and resources