
R6010ANX
NRNDRohm Semiconductor
MOSFET N-CH 600V 10A TO220FM

R6010ANX
NRNDRohm Semiconductor
MOSFET N-CH 600V 10A TO220FM
Description
General part information
R6010ANX
MOSFET N-CH 600V 10A TO220FM
Technical Specifications
Parameters and characteristics for this part
| Specification | R6010ANX |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 10 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220FM |
| Power Dissipation (Max) | 50 W |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available