IRFS4227TRLPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 26 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 26 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS4227TRLPBF

Current - Continuous Drain (Id) @ 25°C	62 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	98 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	330 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Infineon Technologies IRFS4227TRLPBF	26 mOhm	D2PAK	MOSFET (Metal Oxide)	N-Channel	-40 C	175 °C	10 V	62 A	330 W	200 V	5 V	30 V	98 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4600 pF	Surface Mount

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General part information

N-Channel 200 V 62A (Tc) 330W (Tc) Surface Mount D2PAK

Technical documentation and resources